Method of forming buried layers by ion implantation
摘要
A method is described for forming buried layers by ion implantation which includes removal of the damaged region in the semiconductor crystal resulting from such implants. Impurity ions are implanted near the surface of a silicon substrate. The substrate is then heated in an oxidizing ambient for a sufficient length of time to allow the impurities to diffuse further into the crystal while an oxide layer grows on the surface consuming the damaged region. The oxide is removed leaving the impurities in defect-free material upon which may be grown an epitaxial layer.
申请公布号
US3895965(A)
申请公布日期
1975.07.22
申请号
US19730363401
申请日期
1973.05.24
申请人
BELL TELEPHONE LABORATORIES, INCORPORATED
发明人
MACRAE, ALFRED URQUHART;MILLER, PAUL;MOLINE, ROBERT ALAN;SIMPSON, JOHN