发明名称 |
ION ETCHING |
摘要 |
Etching masks for ion etching which consist of a material which has an etching velocity which is independent of the angle of incidence of the etching ion beam are of advantage in particular when etching deep structures ( > 1 mu m) in a substrate of a material having an etching velocity which depends on the angle of incidence of the ion beam. Material of the etching mask: titanium. |
申请公布号 |
GB1414029(A) |
申请公布日期 |
1975.11.12 |
申请号 |
GB19730054719 |
申请日期 |
1973.11.26 |
申请人 |
PHILIPS ELECTRONIC ASSOCIATED INDUSTRIES LTD |
发明人 |
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分类号 |
C23F4/00;G03F7/20;H01L21/00;H01L21/263;H01L21/302;H01L21/3065;H01L49/02 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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