Methods for uniform imprint pattern transfer of sub-20 nm features

摘要

Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.

主权项

1. An imprint lithography method comprising the steps of:
imprinting a patterned layer of an organic polymerized material on a substrate, the patterned layer having a residual layer and one or more protrusions and recessions defining features of the patterned layer, with the protrusions extending from the residual layer a height of 20 nm or less and having an aspect ratio of 1.5:1 to 3:1; depositing an etch selective material onto at least the protrusions and the recessions of the patterned layer, the etch selective material comprising a metal, metalloid or non-organic oxide having an etch selectivity of 50:1 or more relative to the organic polymerized material; etching back the deposited etch selective material to reveal the protrusions; etching back the protrusions to reveal the substrate; and etching the substrate to form an inverse pattern of the patterned layer in the substrate at high fidelity.