FinFET isolation structure and method for fabricating the same

摘要

A semiconductor device includes a semiconductor device and a semiconductor fin on the semiconductor substrate, in which the semiconductor fin has a fin isolation structure at a common boundary that is shared by the two cells. The fin isolation structure has an air gap extending from a top of the semiconductor fin to a portion of the semiconductor substrate. The air gap divides the semiconductor fin into two portions of the semiconductor fin. The fin isolation structure includes a dielectric cap layer capping a top of the air gap.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a semiconductor fin on the semiconductor substrate; and two cells adjacent to each other on the semiconductor fin, the semiconductor fin having a fin isolation structure at a common boundary that is shared by the two cells, the fin isolation structure having an air gap extending from a top of the semiconductor fin to a portion of the semiconductor substrate, wherein the air gap divides the semiconductor fin into two portions of the semiconductor fin, the fin isolation structure comprising a dielectric cap layer capping a top of the air gap.