发明名称 |
Nitride-enriched oxide-to-oxide 3D wafer bonding |
摘要 |
A semiconductor structure comprising a first semiconductor structure; a second semiconductor structure; and a silicon-nitride layer configured to bond the first semiconductor structure and second semiconductor structure together. The first semiconductor structure comprises a first wafer; a first dielectric layer; a first interconnect structure; and a first oxide layer. The second semiconductor structure comprises a second wafer; a second dielectric layer; a second interconnect structure; and a second oxide layer. The structure further comprises a first nitride layer residing on a top surface of the first oxide layer formed by a nitridation process of the top surface of the first oxide layer; and a second nitride layer residing on a top surface of the second oxide layer formed by the nitridation process of the top surface of the second oxide layer. Further, the silicon-nitride layer comprises the first nitride layer and the second nitride layer. |
申请公布号 |
US9496239(B1) |
申请公布日期 |
2016.11.15 |
申请号 |
US201514967137 |
申请日期 |
2015.12.11 |
申请人 |
International Business Machines Corporation |
发明人 |
Edelstein Daniel C.;Yang Chih-Chao |
分类号 |
H01L25/065;H01L23/00;H01L23/528;H01L21/02 |
主分类号 |
H01L25/065 |
代理机构 |
Sherman IP LLP |
代理人 |
Sherman IP LLP ;Sherman Kenneth L.;Schaul Joshua A. |
主权项 |
1. A structure, comprising:
a first semiconductor structure; a second semiconductor structure; and a silicon-nitride layer configured to bond the first semiconductor structure and second semiconductor structure together; wherein the first semiconductor structure comprises a first wafer and a first dielectric layer. |
地址 |
Armonk NY US |