| 发明名称 | Recessed metal liner contact with copper fill | ||
| 摘要 | A method of fabricating a contact above a source or drain region of an integrated circuit includes depositing a first liner conformally in a bottom and along a sidewall of a trench formed above the source or drain region, depositing a second liner conformally over the first liner, and stripping the first liner and the second liner from a portion of the sidewall from an opening of the trench to a height above the bottom of the trench. The method also includes depositing a third liner conformally over the second liner on the bottom and to the height above the bottom of the trench and on the portion of the sidewall, and depositing a metal fill to fill the trench. | ||
| 申请公布号 | US9496225(B1) | 申请公布日期 | 2016.11.15 |
| 申请号 | US201615018387 | 申请日期 | 2016.02.08 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Adusumilli Praneet;Basker Veeraraghavan S.;Bu Huiming;Liu Zuoguang |
| 分类号 | H01L23/48;H01L23/535;H01L21/768;H01L23/532 | 主分类号 | H01L23/48 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method of fabricating a contact above a source or drain region of an integrated circuit, the method comprising: depositing a first liner conformally in a bottom and along a sidewall of a trench formed above the source or drain region; depositing a second liner conformally over the first liner; stripping the first liner and the second liner from a portion of the sidewall from an opening of the trench to a height above the bottom of the trench; depositing a third liner conformally over the second liner on the bottom and to the height above the bottom of the trench and on the portion of the sidewall; and depositing a metal fill to fill the trench. | ||
| 地址 | Armonk NY US | ||