发明名称 Fabrication of bi-level circuits
摘要 Disclosed is a method of fabricating bi-level circuits which include metallization of via holes (14 and 15) in insulating subustrates (10). A thick film metal paste (13) is prepared which according to one embodiment comprises copper, glass frit and an organic vehicle including a low molecular weight ethyl cellulose binder and solvents of butyl carbitol acetate and alpha terpineol. The paste is deposited onto the substrate and through the holes. The structure is baked with the printed surface (12) down in order to establish a solvent concentration gradient in the paste which results in solid material accumulating away from the printed surface to form the contact pad (16). The material is then fired to establish the desired conductivity.
申请公布号 US4191789(A) 申请公布日期 1980.03.04
申请号 US19780956885 申请日期 1978.11.02
申请人 BELL TELEPHONE LABORATORIES INC 发明人 BROWN, JOHN F;STANTON, ROBERT M
分类号 H05K1/03;H05K1/09;H05K1/16;H05K3/40;(IPC1-7):H05K1/04;H05K1/08 主分类号 H05K1/03
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