| 摘要 |
PURPOSE:To improve the performance of an IC without changing a conventional method of production thereof to a great extent, by converting the surfaces of a poly- Si layer of a high resistance and a shallow inpurity diffusion layer of a high resistance into thin metal silicide layers of a low resistance. CONSTITUTION:A channel stopper 22, a field oxide film 23 and a gate oxide film 24 are provided on a p-type Si substrate 21. A Si3N4 mask is then provided to selectively form doped poly-Si layers 25G, 25C. The side surface of the oxide films are covered with thermal oxidization films 27. The oxide film 24 is then removed to form a n<+> layer by using the layer 25G as a mask. The Si3N4 mask is removed to form a metal layer 31. The surfaces of the poly-Si and n<+> layers are heat-treated to form thin metal silicide layers 32 of a low resistance. The metal film 31 is then selectively etched to complete a semiconductor IC. When Pt or Ni is used for the metal in the metal film, an extremely thin film having an extremely low resistance value can be obtained. Since this film is very thin, the thickness of the poly-Si layer can be reduced. In addition, breaking of wire never occurs in a higher-order wiring. Since the wiring resistance is decreased to a remarkable extent, the IC can be operated at a high speed. |
