| 摘要 |
<p>PURPOSE:To reduce the floating inductance and diminish the reduction of reverse biasing time of a reverse conducting thyristor stack by a method wherein short-circuiting conductors connecting a thyristor element and a diode element in antiparallel are made to be intersected. CONSTITUTION:A flat type reverse-conducting thyristor element 1 and a flat type diode element 2 are arranged side by side putting the polarities in the same direction, and are connected in antiparallel making short-circuiting conductors 7, 8 to intersect with each other. Plural penetrating holes 11 having width a, length b are prepared in the short-circuiting conductor 7, and conducting parts 12 processed to be covered with insulating films are prepared in the short-circuiting conductor 8. Then the short-circuiting conductors 7 and 8 are made to be intersected, the conductors 12 are put into the penetrating holes 11 and are respectively adhered to the pressure contacting parts 8a, 8b. Cooling means 3-6 are provided at the end parts of both elements, and main circuit terminals 9, 10 are prepared.</p> |
