| 摘要 |
PURPOSE:To prevent the lowering in the voltage fed to the electronic circuit due to lamp illumination, by short-circuiting the resistor as required and inserting the diffusion resistor manufactured at the same time as P-Well impurity region between the cell and electronic circuit. CONSTITUTION:The resistor 101 produced with diffusion simultaneously with thin P-Well being the region of n-channel MOS transistor in the complementary MOS transistor is inserted between the oscillation section 1 and frequency division section 2. At the illumination of the lamp 105, the MOS transistor 104 is ON with the signal of the lamp switch 103 and the resistor 101 is short-circuited. Further, at the start of oscillation, the oscillation detection signal can be inputted to the gate of MOS transistor to short-circuit the resistor 101. Since the resistor 101 changes the value with temperature, the operation of the circuit is made stable. |
