| 摘要 |
<p>PURPOSE:To enable to simple obtain a thin-film single crystal having a low transisition density and a high ratio resistance by a method wherein a high-ratio-resistance compound semiconductor is epitaxially grown on a low-transition-density substrate, and then said substrate is removed. CONSTITUTION:On the upper surface of an Si doped N type GaAs single crystal substrate 10 having transition density of 2,000cm<-2> and a covering of protective film 9, a semiinsulating GaAs epitaxial layer 11 is grown. An insulator 12 is provided on the layer 11 and then the substrate 10 is removed together with the protective film 9. As a result, the high-ratio-resistance and low-transition-density layer sticked to the insulator 12 can be obtained. A wafer for a semiconductor device is formed by providing an active layer on the layer 11 obtained by the above-mentioned method.</p> |
