HIGH-POWER LED CHIP AND MANUFACTURING METHOD THEREFOR

摘要

Disclosed are a high-power LED chip and a manufacturing method therefor. A regular groove is formed in a gallium nitride epitaxial layer, a first reflecting mirror connected to a P electrode is formed on a P-type gallium nitride layer, and a second reflecting mirror connected to an N electrode is formed in the groove, to guarantee the uniform distribution of currents. The problem of poor heat dissipation of a high-power chip is solved using a non-conducting bonding substrate with good heat conductivity. Light is emitted out from the N sides, the light-emitting efficiency is greatly improved using the surface micro roughening treatment, and both the N electrode and the P electrode are enabled to be on a surface of an N-type gallium nitride layer, so that the encapsulation process becomes simpler.