发明名称 PLANAR TYPE SEMICONDUCTOR PHOTOELECTRIC CONVERTING ELEMENT
摘要 PURPOSE:To give the higher sensitivity on the comparatively shorter wavelength side, by providing a light screening so that a light enters through only the vicinity of the peripheral part of a PN junction plane. CONSTITUTION:The peripheral part 6a of the PN junction plane 6 is formed at the location slightly farther than the periphery of a window 3, by the diffusion not only in the direction of the depth but also in the lateral direction when a P layer is formed. Therefore, the light enters into only a long and narrow region from the peripheral part 6a of the PN junction 6 to the periphery of an electrode 13. As a result, the sensitivity to the comparatively longer wavelength side is decreased, and the sensitivity to the shorter wavelength side is relatively enhanced.
申请公布号 JPS56165370(A) 申请公布日期 1981.12.18
申请号 JP19800069169 申请日期 1980.05.23
申请人 MINOLTA CAMERA KK 发明人 SHIBATA YOSHITAKA;IKUTA EIJI;SHIBATA YOSHIKI
分类号 H01L31/10;H01L31/103 主分类号 H01L31/10
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