| 摘要 |
PURPOSE:To protect a gate by mounting a diode under gate wiring directly coupled with a gate terminal. CONSTITUTION:An N well 2 is formed on the surface of a P type Si substrate 1, a P<+> layer 3 and a P<+> layer 4, one part thereof is short-circuited with the substrate 1, are shaped on the well 2, and the Al gate wiring G3 and a source electrode S of an N channel MOSFET are connected through the windows 9 of a surface oxide film 5. A PNP junction of a diffusion layer is utilized as the gate protective diode. According to this constitution, special space is unnecessitated, the protective diode can be formed without increasing the area of a chip, and the diode can surely be inserted between the MOSFET and a terinmal, thus augmenting a protective effect. |
