| 发明名称 |
RADIATION-SENSITIVE AVALANCHE DIODE AND METHOD OF MANUFACTURING SAME |
| 摘要 |
An avalanche diode for radiation detection with very low noise by using a structure having four successive layers (4,3,2,1) of the same conductivity type with alternately high and low doping. Particularly suitable as a planar photoavalanche diode. |
| 申请公布号 |
DE2861768(D1) |
申请公布日期 |
1982.06.09 |
| 申请号 |
DE19782861768 |
申请日期 |
1978.08.23 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
SMEETS, EUGENIUS THEODORUS JOSEPHUS MARIA |
| 分类号 |
G01T1/24;H01L31/107;(IPC1-7):H01L31/10;H01L31/18 |
主分类号 |
G01T1/24 |
| 代理机构 |
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