| 摘要 |
PURPOSE:To proceed with heat treatment of a compound semiconductor without surface deterioration by a method wherein when heat-treating the semiconductor, this semiconductor is housed in a vessel whose upper side is open, and thereon another vessel which houses a compound including a low-melting point element and a high-vapor pressure element and also which has a number of through holes in the bottom is put, from which a high-vapor pressure constituent element is supplied. CONSTITUTION:A GaAs substrate 15 subject to heat treatment is housed in No.2 vessel 14 made of carbon whose upper side is open, and thereon No.1 vessel 12 made of carbon whose bottom has a number of through holes is mounted. Next, a Ga fusion 11 containing a low-fusing point element and a high-vapor pressure element is introduced into this No.1 vessel 12, and an enclosed space 16 is made between substrate 15 and fusion 11, where substituting hydrogen. With this construction, they are heated at nearly 950 deg.C to touch the high-vapor pressure element contained in the fusion 11 to the substrate 15 while heat treated. At this moment, a GaAs 13 constituting a weight is put on the fusion 11 beforehand preventing that the fusion 11 becomes round due to its surface tension and the space becomes open. |
