发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which suppresses increase in material cost of a sintering bonding material and achieves high quality bonding.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: (a) a process of arranging a sheet-form sintering bonding material 2a on a substrate (insulating substrate 3); (b) a process of arranging a semiconductor element 1 on the bonding material 2a after the process (a); and (c) a process of sintering the bonding material 2a by applying pressure between the substrate and the semiconductor element 1. The bonding material 2a contains fine particles of Ag or Cu, and the fine particles are wrapped by an organic film.SELECTED DRAWING: Figure 1
申请公布号 JP2016213223(A) 申请公布日期 2016.12.15
申请号 JP20150092616 申请日期 2015.04.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 HINO YASUNARI;KAWABATA DAISUKE
分类号 H01L21/52 主分类号 H01L21/52
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