| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to more easily manufacture a high-speed and high sensitive avalanche photodiode which achieves high reproducibility of an operation voltage.SOLUTION: An avalanche photodiode comprises a multiplication layer 103 which is composed of a compound semiconductor and formed between a light absorption layer 104 and an n-type contact layer 102, and has a band gap smaller than that of the light absorption layer 104. With this configuration, even when electric field intensity becomes uniformly high in the light absorption layer 104 and the multiplication layer 103 at the time of voltage application to the avalanche photodiode, avalanche breakdown can selectively be generated only in the multiplication layer 103.SELECTED DRAWING: Figure 1 |
