| 摘要 |
PURPOSE:To improve the accuracy of a resistor made of polycrystalline semiconductor connected to a second wiring layer by forming the second wiring layer and the resistor through an interlayer insulating film on a first wiring layer. CONSTITUTION:An interlayer insulating film 10 is formed on a first layer wiring layer 9 formed on an Si single crystal substrate 1 formed with a bipolar N-P- N type transistor, a polycrystalline Si of high specific resistance is deposited on the film 10, is then patterned, and an impurity is then doped, thereby forming a resistor 13 having desired resistance value. Then, a through hole 12 reaching the first layer is formed, aluminum is deposited on the overall surface, and is patterned, thereby forming the second wiring layer 11. In this manner, a high resistance of high accuracy can be obtained without necessity of large chip area. |
