Beam shapers, annealing systems employing the same, methods of heat treating substrates and methods of fabricating semiconductor devices

摘要

A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

主权项

1. A method of treating a substrate comprising:
generating a energy beam at an energy source; receiving the energy beam at a beam section shaper that modifies a section shape thereof to output a shape-modified energy beam; receiving the energy beam at a beam intensity shaper, the received energy beam having a first intensity profile, the beam intensity shaper outputting an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof; and applying the intensity-modified energy beam to a substrate positioned at a stage, the intensity-modified energy beam incident at the substrate for treating the substrate.