| 摘要 |
PURPOSE:To give effective protective characteristics in an integrated circuit integrated to a high degree, and to prevent the complication of the manufacturing process by interposing a resistance means between the gate and groudning point of a protective transistor Tr2. CONSTITUTION:The resistor R2 is set up between the gate and grounding point of the MOS transistor Tr2 for protection. When surge voltage is applied to an input pad 11 and the drain side of the protective transistor Tr2 reaches high potential, the gate potential of the transistor Tr2 is coupled and pulled up by capacitance between the drain and gate of the transistor. Accordingly, potential difference between the drain and gate of the transistor Tr2 is reduced, and an electric field applied to a gate oxide film can be inhibited to a small value. |
