| 摘要 |
PURPOSE:To operate a storage circuit more functionally by using two word lines and connecting gates of a GaAs FET to the different word lines respectively, and allowing the word lines to bear part of operation. CONSTITUTION:In a figure, transistors (TR)Q1 and Q2 function as transfer gates, but the GaAs FET has dual gate structure and two word lines W1 and W2 are therefore used. The 1st gates of the TRs Q1 and Q2 are connected to the line W1 and the 2nd gates are connected to the W2, but such constitution that the 2nd gate of the TRQ1 and the 1st gate of the TRQ2 are not used is applicable. Thus, the word lines W1 and W2 are controllable independently in the GaAs semiconductor storage circuit, so such complex functions that only the TRQ1 serves as a transfer gate, or that the TRs Q1 and Q2 serve as transfer gates with time difference are realized. |
