| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus of manufacturing a semiconductor element, and to provide a method of manufacturing a semiconductor element using the same.SOLUTION: Degradation of the electrical characteristics of a semiconductor element is suppressed and prevented, by performing dehydrogenation while controlling a heat source unit so that a workpiece, where a processed layer containing hydrogen is formed on a substrate, is irradiated with light over two stages. In other words, the ultraviolet light (UV) irradiated in the first stage induces a chemical reaction for breaking the Si-H bond in the processed layer, and the infrared light (IR) irradiated in the second stage induces a thermal reaction for vaporizing the hydrogen separated from the Si-H bond. When performing both a chemical reaction for cutting the bond between hydrogen and other ion in the processed layer, and a thermal reaction for vaporizing hydrogen, hydrogen in the processed layer can be removed easily at a lower temperature than the temperature when hydrogen is vaporized from the processed layer by using only the thermal reaction.SELECTED DRAWING: Figure 4 |
