| 摘要 |
PURPOSE:To prevent the high impurity density region, having the same conductive type as the substrate, from extending to the lower part of a gate electrode by a method wherein an ion implantation is performed on the upper part of the second conductive type region, excluding the upper part in desired width of the gate side and face region, using the shielding film having a window to be used for selective exposure as a mask. CONSTITUTION:After a silicon dioxide dielectric film 23 has been formed on the surface of a P type silicon substrate 21, an arsenic ion is shallowly implanted using the first resist film 24, to be used for appearance of the capacitor region C, as a mask. Then the second resist film 26, which will be appeared excluding the region of width (w) on the g-side of the gate forming region, is formed and a boric ion is deeply implanted using a film 26, Subsequently, the films 24 and 26 are removed, a polycrystalline silicon film is formed, and a polycrystalline silicon capacitor 28 is formed by performing a patterning. Then, a silicon dioxide insulating film 29, a gate oxide film 30 and a gate electrode 31 are formed by performing an ordinary lamination gate forming method. |
