发明名称 MAGNETO RESISTANCE EFFECT ELEMENT
摘要 PURPOSE:To obtain magneto resistance effect heads having good reproduction sensitivity and long lifetime with good reproducibility by a method wherein a substance having magneto resistance effect is allowed to have the biasing effect by providing a plurality of narrow band-form regions doped with elements so as to nearly cross in the direction oblique to the direction of current flow. CONSTITUTION:The magnetic substance 1 having magneto resistance effect is formed into a pattern of a width W -5mum and a length l -20mum by the technique of photolithography in an Ni-17wt% Fe alloy film of a thickness t -400Angstrom formed on a glass substrate by the method of vacuum vapor deposition. The region 2 with the element B implanted is inclined to the direction of the flow of the current (i) at an angle theta -45 deg., formed in a band form of a width (d) -0.2mum at intervals S -2mum, and provided with lead wires 3 to pass currents to the element. The head using the actual magneto resistance element is cut out of the substrate and then processed by grinding and polishing so that the A-A' cross- section finally becomes the opposed surface to a recording medium, and made to detect a magnetic field generated by the magnetization of the recording medium.
申请公布号 JPS6055683(A) 申请公布日期 1985.03.30
申请号 JP19830163256 申请日期 1983.09.07
申请人 HITACHI SEISAKUSHO KK 发明人 SHIIKI KAZUO;SHIROISHI YOSHIHIRO;SHINAGAWA KIMINARI;TAMURA HIFUMI
分类号 G11B5/39;G01D5/245;H01L43/08 主分类号 G11B5/39
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