| 摘要 |
<p>PURPOSE:To produce the titled senser with high reliability forming a cavity under a cantilever part in a short time without restricting applicable semiconductor substrate by a method wherein a cavity formed under a cantilever part by means of oxidizing and etching porous silicon. CONSTITUTION:A silicon nitride film 11 is anodized on a single crystal substrate 10 and a porous silicon layer 12 is formed from the surface of the substrate 10 to inside of the same. Another silicon nitride film 14 is formed on the surface of the substrate 10 and after etching the film 14 to expose a part of the porous silicon layer 12, the single crystal substrate 10 is oxidized to change the porous silicon layer 12 into a silicon dioxide 12'. Then an aluminum made lower electrode pattern 15 is formed on the silicon nitride film 14 and a piezoelectric film 16 is successively formed on the cantilever part fo form an aluminum made upper electrode 17 on the film 16. Finally the oxidized silicon dioxide 12' may be removed by the porous silicon to form a cavity 18 under the cantilever part.</p> |
