| 摘要 |
<p>PURPOSE:To program a current path easily by forming mutually separate second conduction type second and third semiconductor layers while holding a first conduction type first semiconductor layer, irradiating sections in the vicinity of the crossing positions of each semiconductor layer with a laser, etc. and thermally treating the sections in the vicinity of the crossing positions. CONSTITUTION:N<+> layer semiconductor layers 621, 622 are formed while holding a P type semiconductor layer 61, and impurity concentration in the layers 621, 622 is set to a value higher than the layer 61. When sections in the vicinity of crossing positions among the layer 61 and the layers 621, 622 are irradiated from an upper section with a laser, etc. and thermally treated on a program, an N<+> type impurity oozes out to the layer 61 between the layers 621, 622 from the layers 621, 622 and the layers 621 and 622 are coupled, and a structure changes. A section between B-B' has high conductivity and a section betweein C-C' has extremely low conductivity because of an NPN junction before the program, the section between B-B' has extremely low conductivity because of a PNP junction and the section between C-C' has high conductivity after the program. Accordingly, one current path can be programmed to OFF from ON and the other current path to ON from OFF at a time.</p> |
