发明名称 |
Method of forming an insulating capping layer for a copper metallization layer |
摘要 |
A new technique is disclosed in which a barrier/capping layer for a copper-based metal line is formed by using a thermal-chemical treatment followed by an in situ plasma-based deposition of silicon nitride and/or silicon carbon nitride. The thermal-chemical treatment is performed on the basis of an ammonium/nitrogen mixture in the absence of any plasma ambient.
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申请公布号 |
US7491638(B2) |
申请公布日期 |
2009.02.17 |
申请号 |
US20060383824 |
申请日期 |
2006.05.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HOHAGE JOERG;LEHR MATTHIAS;KAHLERT VOLKER |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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