发明名称 HEAT-CONDUCTIVE ALN CERAMICS SUBSTRATE
摘要 PURPOSE:To assure remarkable heat-conductivity of AlN ceramics substrate with purity of 95% by a method wherein the separated part of AlN needle type polycrystal is limited to 1/3 or less of substrate thickness. CONSTITUTION:The purity of AlN ceramics is recommended to exceed 95% in terms of the thermal conductivity while adding 0.1-5wt% of Y2O3 as sintering assistant. AlN powder is formed into a substrate 2 by means of sintering it in N2 at 1,600-1,850 deg.C as it is sealed up in a fire resistant vessel after removing grease. At this time, AlN needle type polycrystal 1 with Al-Si-O- N composition formed on the side only shall not exceed 1/3 of substrate thickness (t) while if they are formed on both sides, the total thickness shall be also limited to 1/3 of the same. In such a constitution, the heat-conductivity of AlN ceramics substrate may not be deteriorated at all.
申请公布号 JPS6184036(A) 申请公布日期 1986.04.28
申请号 JP19840204708 申请日期 1984.09.30
申请人 TOSHIBA CORP 发明人 MIZUNOYA NOBUYUKI;SUGIURA YASUYUKI
分类号 H05K1/03;C04B35/581;H01L21/48;H01L23/15 主分类号 H05K1/03
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