| 摘要 |
PURPOSE:To enhance not only light absorbing efficiency but also reaction efficiency by effectively using a reaction carrier, by laminating film like semiconductive layers different in band gap energy through conductive layers to form a semiconductive optical catalyst. CONSTITUTION:A N type semiconductor 1 (band gap energy Eg1) and a P type semiconductor 2 (band gap energy Eg2) are connected through a conductive layer 3 to form a semiconductive optical catalyst. The electron formed from the semiconductor 1 by light irradiation (hnu1) is injected in the semiconductive layer 3 by the bending of the band thereof while the hole formed to the semiconductor 2 by light irradiation (hnu2) is also injected in the conductive layer 3 to be distincted by re-coupling. Herein, the hole of the semiconductor 1 and the electron of the semiconductor 2 are respectively transported to the surfaces of the semiconductors 1, 2 to contribute to redox reaction. |
