| 摘要 |
<p>- "Non-volatile static random-acceas memory cell". A non-volatile memory cell (20) contains a pair of cross-coupled like-polarity FET's (Q1 and Q2) that serve as a volatile location (213 for storing a data bit and a like-polarity variable-threshold insulated-gate FET (Q3) that serves as a non-volatile storage location (22). The variable-theshold FET has its source coupled to the drain of one of the cross-coupled FET's, its insulated gate electrode coupled to the drain of the other of the crosscoupled FET's, and its drain coupled to a power supply. Just before a power shutdown which causes the data bit to evaporate, the power supply is pulsed to a suitable level to cause the bit to be transferred to the non-vo-latile location. When power is restored to the normal level, the original data bit automatically returns to the volatile location.</p> |
