Methods of forming patterns for semiconductor device structures

摘要

Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.

主权项

1. A method of forming a pattern in a semiconductor device structure, the method comprising:
forming a patterned first photosensitive resist material over a substrate; forming a second photosensitive resist material over the substrate and over the patterned first photosensitive resist material; selectively exposing at least some of the patterned first photosensitive resist material through the second photosensitive resist material and at least some of the second photosensitive resist material to radiation; and selectively removing the at least some of the patterned first photosensitive resist material and the at least some of the second photosensitive resist material exposed to the radiation with a developer solution.