| 发明名称 |
LOW DISHING COPPER CHEMICAL MECHANICAL PLANARIZATION |
| 摘要 |
Copper chemical mechanical polishing (CMP) formulation, method and system are disclosed. The CMP formulation comprises particulate materials, at least two or more amino acids, oxidizer, corrosion inhibitor, and rest being water. |
| 申请公布号 |
US2016314989(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615001846 |
申请日期 |
2016.01.20 |
| 申请人 |
Air Products and Chemicals, Inc. |
发明人 |
Shi Xiaobo;Schlueter James Allen;Rose Joseph;O'Neill Mark Leonard;Grief Malcolm |
| 分类号 |
H01L21/321;B24B37/04;C09G1/02 |
主分类号 |
H01L21/321 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A copper chemical mechanical polishing (CMP) formulation comprising:
001 to 0.25 wt % particulate materials, 0.01 to 16 wt % at least two amino acids, 0.25 to 5 wt % oxidizer, 1 ppm to 2 wt % corrosion inhibitor, and rest being water; wherein the particulate material is selected from the group consisting of fumed silica, colloidal silica, fumed alumina, colloidal alumina, cerium oxide, titanium dioxide, zirconium oxide, polystyrene, polymethyl methacrylate, mica, hydrated aluminum silicate, and mixtures thereof; and the formulation has a pH from 2 to 12. |
| 地址 |
Allentown PA US |
