发明名称 |
Method to improve reliability of replacement gate device |
摘要 |
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill. |
申请公布号 |
US9484438(B2) |
申请公布日期 |
2016.11.01 |
申请号 |
US201514699427 |
申请日期 |
2015.04.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. |
发明人 |
Ando Takashi;Cartier Eduard A.;Choi Kisik;Narayanan Vijay |
分类号 |
H01L21/3205;H01L29/66;H01L21/324;H01L21/28;H01L21/02 |
主分类号 |
H01L21/3205 |
代理机构 |
Tutunjian & Bitetto, P.C. |
代理人 |
Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
主权项 |
1. A method of fabricating a gate stack for a semiconductor device, said method comprising steps of:
skipping a high temperature annealing step to activate implanted dopants of a source and/or drain before removing a dummy gate; removing the dummy gate; providing a replacement gate structure by performing steps of:
growing a high-k dielectric layer over an area vacated by the dummy gate;depositing a thin metal layer over the high-k dielectric layer;depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal of the replacement gate structure and activating the implanted dopants of a source and/or drain at a high temperature of not less than 800° C.; removing the sacrificial layer of the replacement gate structure; and depositing a metal layer for gap fill. |
地址 |
Armonk NY US |