发明名称 Manufacturing crystalline thin films
摘要 An energy beam 21 such as a laser beam irradiates a semiconductor layer on a sample 1 to melt the semiconductor layer, and the semiconductor layer is then allowed to recrystallise. Light radiated from the semiconductor layer is detected by a microscope 4 and a television camera 3 and this provides an indication of the melted condition of the semiconductor layer. On the basis of the detected radiated light, the irradiation conditions and other parameters can be controlled so as to produce a high quality recrystallised crystalline thin film. A second energy beam 22 can be provided to preheat the semiconductor layer on the sample 1. <IMAGE>
申请公布号 GB2177256(A) 申请公布日期 1987.01.14
申请号 GB19860014683 申请日期 1986.06.17
申请人 * SONY CORPORATION 发明人 YASUO * KANOH;SHIGERU * KOJIMA;SETSUO * USUI
分类号 H01L21/20;C30B13/00;C30B13/24;C30B13/28;H01L21/263 主分类号 H01L21/20
代理机构 代理人
主权项
地址