发明名称 SEMICONDUCTOR AMPLIFICATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor amplification device capable of reducing influences of an output bias circuit connected with the exterior, and suppressing a double wave.SOLUTION: A semiconductor amplification device has a semiconductor amplification element, an output terminal, a bonding wire, a transmission line group, and a short stub circuit. The semiconductor amplification element has an input electrode and an output electrode. The transmission line group includes a plurality of transmission lines. The plurality of transmission lines at least has a first transmission line having a first electric length equal to or less than 90° at an upper limit frequency in a band, and a second transmission line having a second electric length equal to or less than 90° at the central frequency in the band. A characteristic impedance of the second transmission line is higher than that of the first transmission line. The short stub has a capacitor, and a third transmission line having a third electric length of about 90° at the central frequency. One end part of the third transmission line is connected with the second transmission line at a position where the electric length at the central frequency becomes about 45°, toward the output terminal side.SELECTED DRAWING: Figure 1
申请公布号 JP2016197828(A) 申请公布日期 2016.11.24
申请号 JP20150077419 申请日期 2015.04.06
申请人 TOSHIBA CORP 发明人 TAKAGI KAZUTAKA
分类号 H03F3/60 主分类号 H03F3/60
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