| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer manufacturing method including a process of evaluating a semiconductor wafer after an ion implantation treatment or after a recovery heat treatment in a non-destructive and non-contact manner.SOLUTION: A semiconductor wafer manufacturing method includes the steps of: irradiating ion toward a surface of a semiconductor wafer to perform an ion implantation treatment; and bringing to the next process, a semiconductor wafer determined that ion implantation by an ion implantation amount within a preset range is performed. The semiconductor wafer manufacturing method further includes the step of performing photoluminescence measuring on the surface of the semiconductor wafer after the ion implantation treatment between the ion implantation treatment and the above-mentioned next process, in which the determination is performed based on the measurement result of the photoluminescence measuring.SELECTED DRAWING: None |
