| 摘要 |
<p>In pressure-contact switchable semi-conductor elements with a divided contact electrode in the semi-conductor body, improved switching behaviour by means of specific resistors in the current path of the emitter region areas is achieved by the fact that a base metallization (6) is applied to each base region part lying between two emitter region areas; that an insulating layer (7) is appled to each base metallization, extending over the appropriate edge of the two emitter region areas; and, on the insulating layer, is applied a through-type emitter metallization (8) which covers the insulating layer and the free surfaces of the emitter region areas. The superficial parts of the emitter metallization, which are correspondingly located over a base metallization, carry a through-type contact plate (10) made of, for example, molybdenum. The emitter metallization is so dimensioned that the corresponding lateral voltage drop between the contact plate and plane of symmetry of an adjacent section of emitter region exceeds 10 mV during operation with a nominal voltage.</p> |
