| 摘要 |
PURPOSE:To accurately control a semiconductor integrated circuit device even in a fine capacity by performing a predetermined capacity value with the parasitic capacity of a switch. CONSTITUTION:A pattern for a capacity is eliminated since a capacity is provided in an analog switch of CMOS composed of N-channel and P-channel transistors made of N-type diffused layer 1, a P-type diffused layer 2 and a gate 3. The switch turns ON/OFF its own capacity by a gate control signal. A plurality of the switches are disposed to easily vary fine capacity. An N- channel transistor or a P-channel transistor may be used solely as the switch. In this case, since the contact 5 for diffusing aluminum wirings to connect the N-channel to the P-channel, diffusing mask pattern can be further reduced, thereby controlling further fine capacity. |
