| 摘要 |
PURPOSE:To manufacture a target stably forming a thin electrode film having uniform Si concentration, by subjecting a molten Al-Si alloy to rapid solidification so as to restrict the precipitation of primary-crystal silicon practically within the grain boundaries and inhibit the precipitation of the above in the crystalline grains. CONSTITUTION:An Al-Si alloy (Al -0.5-2wt.% Si, Al-Si-Ti, Al-Si-Cu, etc.) is heated and melted in a refractory crucible free from contamination. The resulting molten alloy is poured into a mold 2 placed on the water surface of a water tank 1, on which cooling water is sprayed through a spray nozzle 4 to carry out rapid solidification..As a result, an ingot in which the precipita tion of prymary-crystal silicon is restricted practically within the grain bounda ries and the precipitation of primary-crystal silicon in the crystalline grains is inhibited can be obtained. Moreover, since there are cases where the precipita tion of Si in the crystalline grains occurs in part in the vicinity of the ingot surface, the part is eliminated. By finish-working this ingot into a target, target forming a wiring film in which Si is uniformly distributed can be obtained. |
