MANUFACTURE OF THIN-FILM TRANSISTOR

摘要

PURPOSE:To manufacture a thin-film transistor, in which the generation of a short-circuit defect is prevented, by slopingly forming the shoulder sections of source-drain electrodes. CONSTITUTION:A Ti electrode film 22 is applied and shaped onto a glass substrate 21. Resist films 23 for source-drain electrode patterns are formed, the Ti film 22 is etched in the extent of over etching by phosphoric acid, and side etching is promoted. Consequently, the Ti films 22 with tapered edge sections are shaped to a desired pattern. The resist films 23 are removed. The Ti films 22 are used collectively as one discharge electrodes, a meshy electrode 24 as another electrode is faced oppositely to the upper sections of the discharge electrodes, and fixed DC voltage is applied. Accordingly, a source electrode S and a drain electrode D consisting of the laminate of the Ti film 22 and an n<+>a-Si film 25 are acquired, and the surface of the film 25 in an upper layer takes the tapered shape of a smooth shoulder section the same as the Ti film 22 in a lower layer.