| 摘要 |
PURPOSE:To measure a minute dimension of a submicron region with high accuracy, by using laser beam having a good condensing property and stable luminous intensity distribution. CONSTITUTION:Laser beam 100 is condensed into a predetermined beam shape by an optical system 11 to irradiate and scan an object 20 to be measured and the intensity of the reflected beam 114 from the object 20 to be measured at every scanning state is detected. This intensity of the reflected beam is photoelectrically converted by a photoelectric converter part 13 to detect a reflected beam intensity pattern HP as a voltage value by a reflected beam intensity pattern detection part 15 and said pattern HP is subjected to smoothing processing by a smoothing processing part 16 to calculate change max. voltage HE wherein the change from the reference intensity thereof becomes max. Next, the value of the pattern pitch at the predetermined slice level of the voltage HP and the integrated voltage value of the sum total of the reflected beam intensities in the predetermined region of the pattern HP are respectively detected. The values of at least two or more quantities are compared from among three values detected as mentioned above, the surface reflectivity of the preset part to be measured in its dimension of the object 20 to be measured, a reference change max. voltage value determined by the dimension, a reference pattern pitch and a reference integrated voltage value to measure the dimension of the object to be measured 20.
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