VERFAHREN ZUR HERSTELLUNG VON HALBLEITERVORRICHTUNGEN

摘要

This invention provides a method of fabricating semiconductor devices which permits high device density fabrication by providing an oxide layer (2) for isolation of the devices and selectively growing an epitaxial layer (21) as areas for the effective device regions to secure the least lateral isolation distance between the devices. The method also includes as an intermediate step the creation of a doped region 14 in the substrate by ion implantation. <IMAGE>