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发明名称
MOS FIELD-EFFECT TRANSISTOR HAVING LDD STRUCTURE
摘要
申请公布号
JPH021940(A)
申请公布日期
1990.01.08
申请号
JP19880142249
申请日期
1988.06.09
申请人
MITSUBISHI ELECTRIC CORP
发明人
OSADA YOSHIHIRO
分类号
H01L21/336;H01L29/78
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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