| 摘要 |
<p>The interconnection structure of the power semiconductor for a high density and a small size has an insulating substrate on which is applied a conducting layer in the form of a conductor pattern. The conducting layer comprises an insulating base layer soldered up to a copper film or an aluminium film ; alternately, a bottom copper film with an aluminium film on top can be used. The insulating substrate has a thickness of 80 microns and is made of an epoxy type resin. On the substrate, a semiconductor device provides or interrupts the flow of electric current, and a current terminal is connected to the substrate and to the semicondutor device.</p> |
