Read-write memory for digital information storage in electrical communication engineering. In known read-write memories, one memory cell is provided for storage of each bit. The memory cells are arranged in rows and columns. For writing and reading the information, only one memory cell at a time is addressed. The intention is to extend the technology of writing and reading by the new read-write memory. Optionally, all memory cells of one row or column are addressed. The data word to be written or read contains as many bits as there are memory cells in one row or column, and such a data word is written simultaneously to all memory cells of a row. Such a data word is read from all memory cells of a column.
