| 摘要 |
<p>PURPOSE:To improve the degree of integration of a programmable circuit as well as an integrated circuit as a whole by laying out a nonvolatile memory element that causes the deterioration of the degree of integration in a block different from the programmable circuit. CONSTITUTION:An integrated circuit contains a programmable logic circuit 1, an SRAM 2, an EPROM 3 set outside the circuit 1, and a transfer circuit 4. The EPROM 3 of a nonvolatile memory element is set in a block different from that of the circuit 1 and at the outside of the circuit 1 within the same chip. As a result, the voltage of a high level is not applied to the circuit 1 when the EPROM 3 is written. While a memory element that holds the program data like the logic specifications, etc., are set at the necessary parts within the circuit 1 as much as possible in terms of the reading speed, the layout of wirings, etc.</p> |
