发明名称 NONVOLATILE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To surely protect a data by a method wherein the number of rewrite operations is limited at one part of an electrically erasable and programmable read-only memory element (EEPROM) and the data is fixed for a rewrite operation after the number of rewrite operations. CONSTITUTION:A memory cell array 1 composed of an EEPROM is constituted of a rewrite region 11 where a data can be rewritten and of a region 12 where the number of rewrite operations is limited. That is to say, before the data is written to the memory limitation region 12, a set value of a counter 9 until the data is fixed is serially input in advance from an external terminal; the data can be rewritten up to the number of rewrite operations of the set value; when the number is exceeded, the data can be fixed completely. Thereby, it is possible to protect them from an erroneous write operation.</p>
申请公布号 JPH02214156(A) 申请公布日期 1990.08.27
申请号 JP19890034369 申请日期 1989.02.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 ASARI SEIICHIRO
分类号 G11C17/00;G11C16/02;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C17/00
代理机构 代理人
主权项
地址