发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME, APPARATUS FOR METAL DEPOSITION AND MANUFACTURE OF METAL SOURCE
摘要 PURPOSE: To decrease mobile ions and to decrease the drift of a threshold voltage by providing one metal conductor at least containing a mobile ion getter. CONSTITUTION: The mobile ion getter (absorber) is contained in a metal conductor on a semiconductor device. Preferably, the materials of the mobile ion getter are chrome, molybdenum and tungsten or the like. The chrome to be functioned as the getter decreases the diffusion of mobile ion storage from the metal conductor of the device into an insulating layer. The materials of the mobile ion getter (gettering materials) are added to the conductor before or while metal is deposited on the semiconductor device.
申请公布号 JPH02281621(A) 申请公布日期 1990.11.19
申请号 JP19900069942 申请日期 1990.03.22
申请人 AMERICAN TELEPH & TELEGR CO <ATT> 发明人 JIYOOJI NIYUURANDO BURAUN;RUUKU JIYOSEFU HAWAADO;UIRIAMU FUREDERITSUKU RIMURAA
分类号 H01L21/28;H01L21/285;H01L21/322;H01L23/26;H01L23/532;H01L29/43 主分类号 H01L21/28
代理机构 代理人
主权项
地址