发明名称 |
Method of producing semiconductor device. |
摘要 |
<p>An impurity adsorption layer is formed on a substrate surface and solid-phase thermal diffusion is carried out to form source and drain regions of the metal-insulator-semiconductor field-effect-transistor having lightly doped drain structure or double doped drain structure. The thus formed impurity-doped region is ultrashallow, thereby producing fast and micro semiconductor devices.</p> |
申请公布号 |
EP0417456(A2) |
申请公布日期 |
1991.03.20 |
申请号 |
EP19900114789 |
申请日期 |
1990.08.01 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
KAMIYA, MASAAKI, C/O SEIKO INSTRUMENTS INC.;AOKI, KENJI, C/O SEIKO INSTRUMENTS INC.;SAITO, NAOTO, C/O SEIKO INSTRUMENTS INC. |
分类号 |
H01L21/225;H01L21/336;H01L29/08;H01L29/78 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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